Samsung’s new 512GB DDR5 DRAM module is not only the first one to be based on the DDR5 specifications but it also claims to be the first with that high capacity to be made using a High K Metal Gate or HKMG process. It breaks the barriers in capacity, speed, and technology.
The components of DRAM and the insulation layer get smaller which in turn will prevent the electrical current from leaking. Samsung found the solution to use the HKMG process which replaces the usual silicon-based insulator with new metals and materials.
There are other benefits of HKMG and lowering the current leakage for the 512GB DDR5 memory, which includes reduction of power consumption by 13% while also increasing performance to 7,200 MB/s.
This is not the first time Samsung is using the HKMG process, it previously used it for its GDDR6 memory for graphics card back in 2018, along with Through-Silicon Via (TSV) technology that it already uses for many DRAM products in the past.
